esd5311z will semiconductor ltd. 1 revision 1. 4 , 201 8 / 0 4 / 23 esd5311z 1 - line , b i - d irectional, ultra - low capacitance trans ient voltage suppressor descriptions the esd5311z is a n ultra - low capacitance tvs (tran sient voltage suppressor) designed to protect high speed data interfaces. it has been specifically designe d to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by esd (e lectro s tatic d ischarge ) . the esd5311z incorporates one pair of ultra - low capacitance steering diodes plus a tvs diode. the esd 5311z may be used to provide esd protection up to 20kv (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 4a ( 8/20 s ) according to iec61000 - 4 - 5. the esd5311z is available in dfn 0603 - 2l package. standard products are pb - f ree and halogen - free. features ? stand - off voltage: 5 v max . ? transient protection for each line according to iec61000 - 4 - 2 (esd) : 20kv ( contact discharge ) iec61000 - 4 - 4 (eft): 40a (5/50ns ) iec61000 - 4 - 5 (surge): 4 a (8/20 s) ? ultra - low capacitance: c j = 0. 25 pf t yp. ? ultra - low leakage curre nt: i r < 1na t yp. ? l ow clamping voltage : v cl = 2 1 v t yp. @ i pp = 16a (tlp) ? small package applications ? usb 2.0 and usb 3.0 ? hdmi 1.3 and hdmi 1.4 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics ? notebooks h ttp // : www. sh - willsemi.com dfn 0603 - 2 l (bottom v iew) pin c onfiguration d = device code * = month code marking (top view) order i nformation device package shipping esd5311z - 2/tr dfn 0603 - 2l 10 000/tape&reel p i n 1 p i n 2 d p i n 1 p i n 2 *
esd5311z will semiconductor ltd. 2 revision 1. 4 , 201 8 / 0 4 / 23 absolute m aximu m r ating s electrical characteristics (t a =25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50, t p = 100ns, t r = 2n s, averaging win dow from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 84 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000 - 4 - 2 air discharge v esd 2 0 k v esd according to iec61000 - 4 - 2 contact discharge 2 0 j unction t emperature t j 1 25 o c operating temperature t op - 40 ~ 85 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c parameter symbol condition min. typ. max. unit rever se maximum working volta ge v rwm 5.0 v rever se leakage current i r v rwm = 5 v <1 1 00 n a rever se breakdown voltage v br i t = 1ma 7.5 9 . 0 10 .0 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 21 v dynamic resistance 1) r dyn 0.7 clamping voltage 2 ) v cl v esd = 8kv 21 v clamping voltage 3 ) v cl i pp = 1a, t p = 8/20s 1 4 v i pp = 4a , t p = 8/20s 21 v junction capacitance c j v r = 0v, f = 1mhz 0.25 0.4 pf
esd5311z will semiconductor ltd. 3 revision 1. 4 , 201 8 / 0 4 / 23 typical characteristics (t a =25 o c, unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs. ambient t emperature 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 1 2 3 4 10 12 14 16 18 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) -5 -4 -3 -2 -1 0 1 2 3 4 5 0.20 0.22 0.24 0.26 0.28 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v) 0 0 100 20 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t
esd5311z will semiconductor ltd. 4 revision 1. 4 , 201 8 / 0 4 / 23 esd clamping ( +8kv contact discharge per iec61000 - 4 - 2) tlp measurement esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2 ) -25 -20 -15 -10 -5 0 5 10 15 20 25 -20 -16 -12 -8 -4 0 4 8 12 16 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
esd5311z will semiconductor ltd. 5 revision 1.4, 2018/04/23 package outline dimensions dfn0603-2l ?? b l e d e cathode marking a a3 a1 top view bottom view side view recommended pcb layout (unit: mm) symbol dimensions in millimeters min. typ. max. a 0.23 0.30 0.34 a1 0.00 0.03 0.05 a3 0.10 ref. d 0.55 0.60 0.67 e 0.25 0.30 0.37 b 0.10 0.15 0.20 l 0.20 0.24 0.30 e 0.40 ref notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. 0.32 0.64 0.20 0.42 0.22
esd5311z will semiconductor ltd. 6 revision 1.4, 2018/04/23 tape and reel information reel dimensions tape dimensions w p1 quadrant assignments for pin1 orientation in tape q1 q2 q4 q3 q1 q2 q4 q3 rd reel dimension w overall width of the carrier tape 1 p1 pitch between successive cavity centers pin1 pin1 quadrant user direction of feed rd 7inch 13inch 2mm 4mm 8mm q1 q2 q3 q4 8mm 12mm 16mm
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